作者单位
摘要
1 西安交通大学 微电子学院, 西安 710049
2 陕西亚成微电子股份有限公司, 西安 710075
提出了一种用于高侧开关的短路限流及保护电路。电路采用二级保护的方式,当短路检测电压不为零且低于参考电压时,限制栅源电压,对电路限流;当短路检测电压高于参考电压时,则延时一段时间后关断功率管。芯片采用0.18 μm 100 V BCD工艺流片。测试结果表明,在先工作后短路和先短路后工作两种情况下,功率管均处于正常工作状态。电路工作电压范围为4~80 V,短路延时时间约200 μs,输出最大可持续电流可达80 A。
短路限流 短路保护 短路延时 工作电压范围 short circuit current limiting short circuit protection short circuit delay operating voltage range 
微电子学
2022, 52(4): 700
Author Affiliations
Abstract
1 Department of Applied Physics, Microelectronic and Physics, Hunan University of Technology and Business, Changsha 410205, China
2 Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
3 Key Laboratory for Laser Plasma (Ministry of Education), IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240, China
When two synchronized laser beams illuminate the inner surface of bulk lithium niobate crystals with magnesium doping (5%/mol MgO:LiNbO3) under the condition of total reflection, semi-degenerate four-wave mixing (FWM) is generated. On this basis, a more sophisticated frequency conversion process on the interface of nonlinear crystal has been researched. The generation mechanism of FWM is associated with the fundamental waves reflected on the inner surface of the nonlinear crystal. Analysis of the phase-matching mechanism confirms that the FWM is radiated by the third-order nonlinear polarized waves, which are stimulated by the third-order nonlinear susceptibility coefficient of the nonlinear crystal. Theoretically calculated and experimentally measured corresponding data have been presented in this article. These results are expected to provide new inspiration for further experimental and theoretical research on frequency conversion in nonlinear crystals.
nonlinear optics four-wave mixing surface of nonlinear crystals third-order nonlinear coefficient 
Chinese Optics Letters
2022, 20(3): 031901
Author Affiliations
Abstract
1 Division of Micro and Nanosystems, KTH Royal Institute of Technology, 11428 Stockholm, Sweden
2 École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
3 Tyndall National Institute, Lee Maltings Complex Dyke Parade, T12 R5CP Cork, Ireland
4 imec vzw. 3DSIP Department, Si Photonics Group, Kapeldreef 75, 3001 Leuven, Belgium
5 Department of Information Technology, Photonics Research Group, Ghent University - IMEC, 9052 Gent, Belgium
6 e-mail: gylfason@kth.se
7 e-mail: frank@kth.se
The emerging fields of silicon (Si) photonic micro–electromechanical systems (MEMS) and optomechanics enable a wide range of novel high-performance photonic devices with ultra-low power consumption, such as integrated optical MEMS phase shifters, tunable couplers, switches, and optomechanical resonators. In contrast to conventional SiO2-clad Si photonics, photonic MEMS and optomechanics have suspended and movable parts that need to be protected from environmental influence and contamination during operation. Wafer-level hermetic sealing can be a cost-efficient solution, but Si photonic MEMS that are hermetically sealed inside cavities with optical and electrical feedthroughs have not been demonstrated to date, to our knowledge. Here, we demonstrate wafer-level vacuum sealing of Si photonic MEMS inside cavities with ultra-thin caps featuring optical and electrical feedthroughs that connect the photonic MEMS on the inside to optical grating couplers and electrical bond pads on the outside. We used Si photonic MEMS devices built on foundry wafers from the iSiPP50G Si photonics platform of IMEC, Belgium. Vacuum confinement inside the sealed cavities was confirmed by an observed increase of the cutoff frequency of the electro-mechanical response of the encapsulated photonic MEMS phase shifters, due to reduction of air damping. The sealing caps are extremely thin, have a small footprint, and are compatible with subsequent flip-chip bonding onto interposers or printed circuit boards. Thus, our approach for sealing of integrated Si photonic MEMS clears a significant hurdle for their application in high-performance Si photonic circuits.
Photonics Research
2022, 10(2): 02000A14
Author Affiliations
Abstract
1 Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha 410083, China
2 Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China
In this Letter, a new method is presented to calculate the interactive length between the fundamental wave and second harmonic generation (SHG) for the configuration of total internal reflection on the inner surface of a nonlinear crystal. Three independent experiments are designed to measure the bandwidths of this second harmonic wave. The theoretical expression of the intensity of SHG is obtained through a nonlinear coupled wave equation. The interactive length of this phase-matched SHG can be calculated mathematically by utilizing the measured bandwidths and the intensity equation. There is no existing method to obtain the interactive length either from theoretical calculations or by experimental measurement. This method can be applied to estimate the extremely short interactive volume in nonlinear processes.
190.4410 Nonlinear optics, parametric processes 190.2620 Harmonic generation and mixing 
Chinese Optics Letters
2019, 17(8): 081902
作者单位
摘要
杭州大学物理系
本文导出了直角刻槽反射光栅在正入射和非正入射以及刻槽偏离直角等情况下,反射夫朗和费(Fraunhofer)衍射强度分布表达式;用数值计算结果,分析和讨论了这种光栅的后向衍射特性.
反射光栅 夫朗和费衍射 后向反射 归一化强度 主最大 
光学学报
1989, 9(8): 732
作者单位
摘要
杭州大学物理系
在非相干光和激光(高斯光束)传输情况下,分别导出了光纤-反射器耦合的后向反射功率耦合系数的一般表示式.并且,给出光纤与几种典型反射器耦合的后向反射功率耦合系数的表示式以及当反射器沿光纤-反射器系统的轴向移动时耦合系数的曲线分布.还对光纤-平面镜和光纤-“猫眼”反射器的后向反射功率耦合系数的曲线分布作了实验测量.
光学学报
1986, 6(6): 549
作者单位
摘要
杭州大学物理系
光泵固体激光器会在激光棒中引起轴向热伸长和径向折射率梯度.这可概括为一种热厚透镜效应.从输出腔镜处光束光斑参数对热透镜焦距的微商出发,直接导出内热厚透镜平行平面腔的热不灵敏条件,并对其适用范围进行了必要讨论.
中国激光
1985, 12(5): 266
作者单位
摘要
杭州大学物理系
用氮激光泵浦单一染料盒盛装的若丹明6G获得同时调谐双波长运转。给出实验装置和输出特性。
中国激光
1984, 11(2): 93

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!